Ion beam and laser processing of materials. ConferenceSINGH, Rajiv; HOLLAND, Wayne.Journal of electronic materials. 1996, Vol 25, Num 1, issn 0361-5235, 164 p.Conference Proceedings

SIMOX research, development, and manufacturingALLEN, L. P; SMICK, T. H; RYDING, G et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 93-97, issn 0361-5235Conference Paper

A study of ion implantation damage and annealing behavior in GaSbIYER, S; PARAKKAT, R; MANGALAM, B et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 119-124, issn 0361-5235Conference Paper

Pulsed laser deposition of titanium nitride and diamond-like carbon films on polymersVISPUTE, R. D; NARAYAN, J; JAGANNADHAM, K et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 151-156, issn 0361-5235Conference Paper

Cavity formation and impurity gettering in He-implanted SiFOLLSTAEDT, D. M; MYERS, S. M; PETERSEN, G. A et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 157-170, issn 0361-5235Conference Paper

Laser processing of BN and AlN filmsNARAYAN, J; WU, H; VISPUTE, R. D et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 143-149, issn 0361-5235Conference Paper

Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator materialBAGCHI, S; LEE, J. D; KRAUSE, S. J et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 7-12, issn 0361-5235Conference Paper

Pulsed laser deposition and physical properties of carbon nitride thin filmsZHANG, Z. J; SHOUSHAN FAN; JINLIN HUANG et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 57-61, issn 0361-5235Conference Paper

Al, Al/C and Al/Si implantations in 6H-SiCRAO, M. V; GRIFFITHS, P; GARDNER, J et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 75-80, issn 0361-5235Conference Paper

Deposition and surface treatment with intense pulsed ion beamsOLSON, J. C; DAVIS, H. A; RAJ, D. J et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 81-85, issn 0361-5235Conference Paper

Photolytic deposition of aluminum nitride and oxy-nitride films at temperatures ≤350KGOURI RADHAKRISHNAN; LINCE, J. R.Journal of electronic materials. 1996, Vol 25, Num 1, pp 69-74, issn 0361-5235Conference Paper

Synthesis of low resistivity complex oxides on MgO using Pt as buffer layerTIWARI, P; WU, X. D; FOLTYN, S. R et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 51-55, issn 0361-5235Conference Paper

Effect of ion dose rate on rapid laser annealing of implanted GaAsMASUDA, K; MURAKAMI, K; NAN, H. Y et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 3-5, issn 0361-5235Conference Paper

Excimer laser-assisted planarization of thick diamond filmsSINGH, R. K; DONG-GU LEE.Journal of electronic materials. 1996, Vol 25, Num 1, pp 137-142, issn 0361-5235Conference Paper

Thin film silicon on insulator substrates and their application to integrated circuitsWILSON, S. R; WETTEROTH, T; HONG, S et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 13-21, issn 0361-5235Conference Paper

Transient plasma shielding effects during pulsed laser ablation of materialsSINGH, R. K.Journal of electronic materials. 1996, Vol 25, Num 1, pp 125-129, issn 0361-5235Conference Paper

Dose-rate effects in silicon-implanted gallium arsenide from low to high dosesJASPER, C; MORTON, R; LAU, S. S et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 107-111, issn 0361-5235Conference Paper

Low energy ion bombardment effects in gold/aluminium nitride/silicon junctionsSTACY, T; LIAW, B. Y; KHAN, A. H et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 113-118, issn 0361-5235Conference Paper

Synthesis of metastable carbon-silicon-nitrogen compounds by ion implantationUSLU, C; PARK, B; POKER, D. B et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 23-26, issn 0361-5235Conference Paper

Thermal expansion, molar volume and specific heat of diamond from 0 to 3000KREEBER, R. R; KAI WANG.Journal of electronic materials. 1996, Vol 25, Num 1, pp 63-67, issn 0361-5235Conference Paper

Implantation of Si under extreme conditions : the effects of high temperature and dose on damage accumulationHOLLAND, O. W; LING XIE; NIELSEN, B et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 99-106, issn 0361-5235Conference Paper

Study of high-quality epitaxial YBCO thin films grown directly on y-cut LiNbO₃TIWARI, P; WU, X. D; FOLTYN, S. R et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 131-135, issn 0361-5235Conference Paper

Visible and infrared (1.54 μm) emission from Er-implanted porous Si for photonic applicationsFEREYDOON NAMAVAR; FENG LU; PERRY, C. H et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 43-49, issn 0361-5235Conference Paper

Strain evolution and dopant activation in P-implanted metastable pseudomorphic Si(100)/Ge_0.12Si_0.88LIE, D. Y. C; SONG, J. H; EISEN, F et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 87-92, issn 0361-5235Conference Paper

The development of biaxial alignment in yttria-stabilized zirconia films fabricated by ion beam assisted depositionRESSLER, K. G; SONNENBERG, N; CIMA, M. J et al.Journal of electronic materials. 1996, Vol 25, Num 1, pp 35-42, issn 0361-5235Conference Paper